How tunneling currents reduce plasma-induced charging

How tunneling currents reduce plasma-induced charging

As semiconductor manufacturing moves towards smaller logic devices and thinner gate oxides, there is serious concern that pattern-dependent charging during plasma etching will impede progress by distorting etch profiles and by causing oxide breakdown. Simulations of the final overetch predict that the use of ultrathin oxides (<5 nm), combined with a low substrate potential, will actually elimin...

Ion mass effect in plasma-induced charging

Simulations of charging and profile evolution during etching of high aspect ratio polysilicon gates in typical high-density plasmas containing heavy ions ~e.g., BCl3 , Cl2 !, predict a reduction in charging and notching when lighter ions ~e.g., He! are added. The reduction occurs because of the influence of the ion mass on the ratio R of the ion sheath transit time to the rf period, which deter...

How does relativity affect magnetically induced currents?

Magnetically induced probability currents in molecules are studied in relativistic theory. Spin-orbit coupling (SOC) enhances the curvature and gives rise to a previously unobserved current cusp in AuH or small bulge-like distortions in HgH2 at the proton positions. The origin of this curvature is magnetically induced spin-density arising from SOC in the relativistic description.

Tunneling Currents in Zinc Oxide

Tunneling currents that increase with molecular elongation.

We present a model molecular system with an unintuitive transport-extension behavior in which the tunneling current increases with forced molecular elongation. The molecule consists of two complementary aromatic units (1,4-anthracenedione and 1,4-anthracenediol) hinged via two ether chains and attached to gold electrodes through thiol-terminated alkenes. The transport properties of the molecule...